INP

Low Threshold Current High Output Power Fundamental Transverse Mode 1.3 μ m InGaAsP/ InP BH Laser

1.3微米低阈值大功率基横模BH InGaAsP/InP激光器

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The Wide BandGap Sandwith in InP Series Heterostructure Materials and its Effects on Materials Characteristic

InP系列异质材料中的宽带隙夹层和它对材料特性的影响

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Finally, discussed are etching mechanism, polishing principles, and control of reactive versions of the InP material.

文章最后讨论了InP材料的腐蚀机理 、 抛光原理及化学反应类型的控制.

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The barrier height for a home made InP in contact with some metals are given.

测量了国产InP单晶与一些金属的接触势垒；

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Characteristics of Temperature and Output Saturation in InGaAsP/ InP Double Heterostructure Light Emitting Diodes

InGaAsP/InP双异质结发光管光功率的温度和饱和特性

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In SiO 2 nanocables were discovered accidentally as we researched in InP nanowires growth.

二氧化矽包覆铟之一维奈米结构的发现,是在成长磷化铟奈米线之偶然情况下被合成出来的.

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Indium Phosphide ( InP) has been indispensable to both optical and electronic devices.

磷化铟（InP）已成为光电器件和微电子器件不可或缺的重要半导体材料。

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On the other hand, the 10. 6 μ m light absorption coefficient of semiconductors such as Si, InP increases with the rising of temperature. The above two factors can easily lead to a thermal runaway phenomenon.

另一方面，Si、InP等半导体材料对10.6μm波长激光的吸收系数随温度的升高而增大，这导致实验时容易产生热致破坏，损伤基片。

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Photoluminescence investigation of nominally undoped bulk InP at low temperature

非掺杂InP的低温光致发光研究

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Internal Parameters of InGaAsp/ InP Lasers with Double Section in Commom Cavity

InGaAsP/Inp双区共腔激光器的内部参数

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The microstructures of INP latex films were characterized by IR and transmission electron microscopy ( TEM ).

以红外光谱、透射 电子显微镜 表征互穿共聚物乳胶膜的微观结构.

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InGaAsP/ InP Buried Crescent Laser Emitting at 1.3 μ m with Low Threshold Current

1.3微米低阈值掩埋新月型InP-InGaAsP激光器

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INP Grenoble Institut National Polytechnique de Grenoble.

国立园艺与风景规划学校.

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Investigation of Proton Bombardment Mask for InGaAsP/ InP PBH CCTS Bistable Lasers

InGaAsP/InP PBH双区共腔双稳激光器的H~+轰击掩膜研究

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GaAs/ GaAsSb metamorphic HBTs ( MM HBTs) have great potential applications because they have both the relative low cost of GaAs-based and highfrequency of InP-based HBT.

GaAs/GaAsSb HBT（MM HBT）由于兼备GaAs的相对低成本和InP HBT的高频等优点，有着广泛的应用前景。

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It is related to the formation of the ( GaP) 1/ ( InP) 1 single layer superlattice in the ordered alloy along [ 111] direction.

认为这与在有序合金中形成沿〔111〕方向的（GSP）1／（InP）1单层超晶格有一定联系。

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Realization of InP-base Resonant Tunneling Diodes Through Air-bridge Technology

利用空气桥技术实现InP基共振遂穿二极管器件

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InGaAsP/ InP Active Time division Multiplexing Photonic Switching Devices

InGaAsP/InP有源时分光子交换器件

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Thermal reaction characteristic of Au/ n-InP contact

Au/n-InP接触的热反应特性

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Angular distribution studies on the reactive scattering of cl_2 molecular beam with inp ( 100) surface

氯分子束与InP（100）表面反应散射的角分布研究

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Etching of Semiconductor InP by APD of Direct Eximer Laser

准分子激光直接刻蚀InP半导体材料

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InGaAsP/ InP MQW Current-Controlled Bistable Lasers/ Nonlinear Switch Gates With Gain

InGaAsP／InP MQW电流控制型双稳／非线性增益开关激光器

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This article aims at analyzing Chinese macro-consumption, GNP ( Gross National Product) and INP ( index number of price) of retailing business. and try to establish an ECM ( error correcting model) with EG two-step standard.

本文旨在对中国宏观消费、国民生产总值和零售物价指数进行协整分析，并使用EG两步法建立一个中国宏观消费的误差修正模型（ECM）。

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The resultsdemonstrat that three electron trape ( E _ c-0.17 eV , E _ c-0.23 eV, E _ c-0.39 eV ) produced inp ￣ + nn ￣ + structures are characterized by deep level transient spectroscopy.

还可引入三个缺陷能级:氧空位E_ 1(E_ c - 0.17ev) 、 双空位E_2 ( E_ c-0.23eV ) 和E_3(E_c-0.39eV).

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The normal and anormal temperature characteristice of photoluminescence spectrum for InP based multilayer heterostructure materials are reported in this paper.

本文报告了InP系列多薄层异质结构材料变温光致发光（PL）谱的正常及异常温度特性；

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Neutron-transmutation doping for InP material

磷化铟材料的中子嬗变掺杂

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The PVS spectra for GaAs 、 InP 、 InGaAs 、 InGaAsP etc. are reported in this paper.

本文介绍了InP、InGaAs、InGaP、InGaAsP等 的光压港(PVS).

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Investigation of UV Laser Direct Etching on InP Material

InP材料UV激光直接刻蚀研究

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Measurements are made on the temperature dependence of threshold current density in DC-PBH 1.3 μ m InGaAsP/ InP laser under direct current.

测量了1.3μm InGaAsp/InP DC-PBH激光器在直流工作条件下，阀值电流密度随温度的变化。

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It means that Bi implantation of Inp is thermal spike, i.e.high temperature regions were formed in the volume of ion cascade.

该值表明铋注入InP的过程是热峰效应的过程（即入射离子在注入碰撞区域内形成了局部的高温区）。

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